Cover of: International Electron Devices Meeting 1992 | Institute of Electrical and Electronics Engineers.

International Electron Devices Meeting 1992

San Francisco, Ca December 13-16, 1992/92Ch3211-0 (International Electron Devices Meeting//Technical Digest)
  • 1056 Pages
  • 2.87 MB
  • 1073 Downloads
  • English
by
Ieee
Electronic devices & materials, Electronic Apparatus And Devices, Science/Mathem
The Physical Object
FormatPaperback
ID Numbers
Open LibraryOL10998389M
ISBN 100780308174
ISBN 139780780308176

Get this from a library. International Electron Devices Meeting,San Francisco, CA, December technical digest. [IEEE Electron Devices Society.;].

Get this from a library. IEEE International Electron Devices Meeting, [IEEE, Electron Devices Society Staff,; Institute of Electrical and Electronics Engineers, Inc. Staff,]. Get this from a library. Electron Devices Meeting, Technical Digest., International.

[Institute of Electrical and Electronics Engineers;]. The IEEE International Electron Devices Meeting (IEDM) is an annual micro- and nanoelectronics conference held each December that serves as a forum for reporting technological breakthroughs in the areas of semiconductor and related device technologies, design, manufacturing, physics, modeling and circuit-device interaction.

The IEEE IEDM is where "Moore’s Law" got its name, as Gordon Moore. The primary meeting for EDS members is the annual IEEE International Electron Devices Meeting (IEDM), which is held in early December in San Francisco, CA.

At this meeting, the latest advancements in the field of electron devices research, development, design, manufacturing, technology and applications are presented to the international. Proceedings. The proceedings of this conference will be available for purchase through Curran Associates.

Electron Devices Meeting (IEDM), International Electron Devices Meeting 1992 book International. International Technical Digest on Electron Devices Meeting, IEDM - San Francisco, United States Duration: 13 Dec → 16 Dec Publication series. T.-C.

Nguyen and R. Howe, Quality factor control for micromechanical resonators, Technical Digest, IEEE International Electron Devices Meeting, San Francisco, California, December, pp.pp. Quality Factor Control for Micromechanical Resonators Clark Z-C.

Nguyen and Roger T. Howe Berkeley Sensor and. Enrico Sangiorgi coauthored 34 papers presented at the International Electron Devices Meeting (IEDM) Conference, and overall more than papers on major journals and conference proceedings.

Lecture Topics: Nanodevices modeling and simulation Photovoltaics devices and technologies Energy Harvesting devices, technologies and systems. IEEE Electron Devices Society. OCLC Number: Notes: "92CH" Description: 1 online resource (1 volume (various pagings)): illustrations: Other Titles: IEEE International Electron Devices Meeting Electron Devices Meeting,technical digest, International: Responsibility: sponsored by Electron Devices Society of IEEE.

Book Search tips Selecting this option will search all publications across the Scitation platform Selecting this option will search all publications for the P. Griffin, P. Carey, and J. Plummer, International Electron Devices Meeting, (unpublished), p. International Electron Devices Meeting, (unpublished), p.

International Electron Devices Meeting Technical Digest (International Electron Devices Meeting Technical Digest) [International Electron Devices Meeting] on *FREE* shipping on qualifying offers. In Proceedings of IEEE International Electron Devices Meeting – (IEEE, ).

Singh, J. et al. 14 nm FinFET technology for analog and RF applications. International Electron Devices Meeting (Iedm [International Electron Devices Meeting ( San Francisco, Calif)] on *FREE* shipping on qualifying offers.

International Electron Devices Meeting (Iedm. Electron Devices Group.

Description International Electron Devices Meeting 1992 PDF

OCLC Number: Notes: Alternate pages blank for "Notes." Pre-conference publication, containing summaries of papers to be delivered at the 18th Annual International Electron Devices Meeting, held Dec., in Washington, D.C.

Sponsored by the IEEE Electron Devices Group. Description: pages map, plan. Technical Digest - International Electron Devices Meeting. Country: United States - SIR Ranking of United States: H Index. Subject Area and Category: Engineering Electrical and Electronic Engineering Materials Science Electronic, Optical and Magnetic Materials Materials Chemistry.

IEEE International Electron Devices Meeting (IEDM) 50th Annual Device Research Conference, None Session 11 IEEE-USA E-Books. A New Buried Channel EEPROM Device. None. Session Start of the above-titled section of the conference proceedings record. International Electron Devices Meeting,Washington, Dc, December/91Ch (INTERNATIONAL ELECTRON DEVICES MEETING//TECHNICAL DIGEST) [Institute of Electrical and Electronics Engineers] on *FREE* shipping on qualifying offers.

Download International Electron Devices Meeting 1992 PDF

IEEE CAS/SSCS, CTCN, EDS Joint Meeting, Wednesday, Janu "A Review of IEDM (International Electron Devices Meeting), 25 January PM to PM (US/Central), Location: Alterra Parkway, Austin, Texas, United States.

International Technical Digest on Electron Devices Meeting, A new robust, wide-range hydrogen sensor technology integrates catalytic gate transistors and resistors with a baseline CMOS process. Pd or PdNi gate transistors detect low concentrations of hydrogen (ppm) and Pd or PdNi thin film resistors sense higher concentrations of.

International Electron Devices Meeting Technical Digest (December 8, 9, 10,Washington, D.C.) [James A. Hutchby; Electron Devices Society of Institute of Electrical and Electronics Engineers] on *FREE* shipping on qualifying offers. IEEE Electron Device Letters 13 (5),An analytic potential model for symmetric and asymmetric DG MOSFETs.

H Lu, Y Taur. International Electron Devices Meeting. IEDM Technical Digest,A Distributed Model for Border Traps in MOS Devices.

Electron Devices Meeting (IEDM), International Electron Devices Meeting (IEDM), IEEE International Electron Devices Meeting (IEDM), IEEE International. We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm.

The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in.

[8] Lim K Y, Lee H, Ryu C, et al. Novel stress-memorization-technology (SMT) for high electron mobility enhancement of gate last high-k/metal gate devices.

In: IEEE Tech Dig International Electron Devices Meeting, San Francisco,   Li and A. Toriumi, in IEEE International Electron Devices Meeting (), pp. – would lead to bias-temperature instability (BTI) issues related to collection of the tunneling, soft-breakdown, and hot carrier injection (HCI)-induced current at.

IEEE 21st International Conference on Vacuum Electronics (IVEC) Technical presentations will range from the fundamental physics of electron emission and modulated electron beams to the design and operation of devices at UHF to THz frequencies, theory and computational tool development, active and passive components, systems, and supporting developers will find that.

In he established a world-record cutoff frequency for high-speed transistors, for which he received the prestigious IEEE Paul Rappaport Award for Best Paper published in an Electron Devices Society journal. Nguyen holds seven U.S. patents and is an author of more than 50 scientific publications.

Author of Conference proceedings, DIPED, Proceedings of the 7th International Symposium on the Physical & Failure Analysis of Integrated Circuits [IPFA '99, GaAs IC Symposium, ASMCInternational Symposium on Power Semiconductor Devices and ICs (Ispsd) Proceedings, Intenational Electron Devices Meeting (Iedm) Proceedings, IEEE International Integrated Reliability.

Find helpful customer reviews and review ratings for IEEE International Electron Devices Meeting at Read honest and unbiased product reviews from our users.

Nanoelectronics refers to the use of nanotechnology in electronic components. The term covers a diverse set of devices and materials, with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively.

Some of these candidates include: hybrid molecular/semiconductor electronics, one-dimensional nanotubes.International Electron Devices Meeting Technical Digest, pp.UTB on SOI 4. (IBM) K. Cheng, A. Khakifirooz, P.

Details International Electron Devices Meeting 1992 EPUB

Kulkarni, S. Ponoth, J. Kuss et al., “Extremely Thin SOI (ETSOI) CMOS with Record Low Variability for Low Power System-on-Chip Applications,” IEEE International Electron Devices Meeting Technical Digest, pp.

BT - IEEE International Electron Devices Meeting, IEDM PB - Institute of Electrical and Electronics Engineers Inc. T2 - 63rd IEEE International Electron Devices Meeting, IEDM Y2 - 2 December through 6 December ER .